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| SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL BCW61A BA BCW61B BB BCW61C BC BCW61D BD COMPLEMENTARY TYPE BCW61AR BCW61BR BCW61CR BCW61DR BCW60 CA CB CC CD BCW61 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PTOT Tj:Tstg VALUE -32 -32 -5 -200 -50 330 -55 to +150 UNIT V V V mA mA mW C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A Min. h11e h12e h21e h22e 1.6 Typ. 2.7 1.5 200 18 30 Max. 4.5 hFE Group B Min. 2.5 Typ. 3.6 2 260 24 50 Max. 6.0 hFE GroupC Min. 3.2 Typ. 4.5 2 330 30 +VBB hFE Group D Min. 4.5 Typ. 7.5 3 520 60 VCC(-10V) Max. 8.5 Max. 12 k 10-4 100 S 50 R2 RL 1sec -10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50 50 R1 BAY 63 tr < 5nsec Zin 100k Oscilloscope PAGE NO S W BCW61 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base - Emitter Voltage SYMBOL V(BR)CEO V(BR)EBO ICES IEBO VCE(sat) VBE(sat) VBE -0.60 -0.68 -0.6 -0.12 -0.25 -0.70 -0.80 -0.55 -0.65 -0.72 140 170 200 250 270 350 340 500 180 11 6 2 6 MIN. -32 -5 -20 -20 -20 -0.25 -0.55 -0.85 -1.05 -0.75 TYP. MAX. UNIT V V nA nA V V V V V V V CONDITIONS. ICEO=-2mA IEBO=-1A VCES =-32V VCES =-32V ,Tamb=150oC VEBO =-4V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V MHz pF pF dB IC =10mA, VCE = -5V f = 100MHz VEBO= -0.5V,f =1MHz VCBO = -10V, f =1MHz IC =- 0.2mA, VCE =- 5V RG=2K, f=1KHz f=200Hz A Static Forward Current Transfer Ratio BCW61A BCW61B hFE 120 60 30 180 80 40 250 100 100 380 110 220 310 BCW61C 460 BCW61D 630 Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Noise Figure fT Cebo Ccbo N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 35 50 85 400 80 480 150 800 ns ns ns ns ns ns -IC : -IB1 : IB2 =10:1:1mA R1=R2=5K VBB =-3.6V, RL=990 *Measured under pulsed conditions. Pulse width=300s. Duty cycle Spice parameter data is available upon request for this device |
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